New Family of Power Transistors from the SiC to RADAR

The state of material technology has progressed to the point where Microsemi can build high power devices with reasonable yields and consistent performance. Two RF power transistors utilizing silicon carbide technology for high power VHF and UHF band pulsed radar application. The two Common Gate N-Channel, Clas AB, SiC Static Induction Transistors (SIT) are capable of providing 1000 W, pulsed with 300 microsec and 10% duty cycle for 406 to 450 Mhz, and 1250 W pulsed at 150 to 160 Mhz.

SiC technology to higher frequencies by introducing a new family of power transistors and modules designed for S-band with frequency range from 3.1 to 3.4 GHz pulsa radar. The new products include a 65 and 100 W power transistor and two Power Solution Modules TM rated at 180 and 200 W with 100 microsec pulse width and 10% duty cycle. The modules demonstrate 40% collector efficiency and power flatness of less than 0.5 dB, utilizing the company's advanced chip design and processing enhancements for high power and high gain.

HVVi Semiconductors announced its first product to target the UHF-band weather and long range radar markets using its High Voltage Vertical Field Effect Transistor (HVVFET) architecture. The company's 50V device offered 175 W pulsed, 55% drain efficiency, 25 dB of gain for a pulse width of 300 microsec and 10% pulse duty cycle at VDD = 50 V and IDQ = 50 mA. The UHF part also provided a boost to system reliability by with standing an output load mismatch corresponding to a 20:1 VSWR accross all phase angles at rated output power and operating voltage accross the entire frequency band.